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Fused Quartz Furnace Tubes for Semiconductor CVD
Our high-purity Fused Quartz furnace tubes are custom-engineered for demanding semiconductor wafer processing, high-temperature annealing, CVD, and diffusion furnaces. These robust tubes withstand up to 1200°C (peak 1450°C), resist acids and corrosive gases, and offer low thermal expansion for dimensional stability in vacuum or low-pressure environments. Custom modifications are available.
Material Specifications
- Primary Material: Fused quartz (SiO₂ ≥ 99.9%)
- Density: 2.2 g/cm³
- Thermal Stability: Resists thermal shock up to 1200°C (continuous use).
Dimensions
- Outer Diameter : 415 mm / ±1.5 mm
- Inner Diameter : 405 mm / ±1.0 mm
- Wall Thickness : 5 mm / ±0.5 mm
- Length : 2300 mm / ±5 mm
Technical Parameters
- Max Working Temperature: 1200°C (short-term peak: 1450°C).
- Pressure Resistance: Withstands 1 atm (vacuum or low-pressure environments).
- Thermal Expansion Coefficient: 0.55 × 10⁻⁶ /°C (20–1000°C).
- Surface Finish: Smooth, non-porous, acid-washed.
Key Features
- Ultra-high purity for contamination-sensitive processes.
- Excellent chemical resistance to acids, halogens, and most corrosive gases.
- Low thermal expansion ensures dimensional stability.
Applications
- Semiconductor wafer processing.
- High-temperature annealing, CVD, or diffusion furnaces.
- Laboratory research and optical industries.
Packaging & Handling
- Packaging: Foam-padded wooden crate.
- Storage: Keep dry, avoid direct sunlight, and store horizontally.
Notes
- Avoid mechanical impact or rapid temperature changes (>200°C/min).
- Custom modifications (e.g., flanges, coatings) available upon request.
For detailed technical support or bulk orders, please consult our engineering team.